• MB85R4M2TFN-G-JAE2 FRAM Memory

MB85R4M2TFN-G-JAE2 FRAM Memory

  • 382
Product Review | Top Rated

    Additional Information

  • Color: Default Color
  • Size: Default Size
  • Origin: China
  • Usage: Default Usage
  • Type: Default Type
  • Efficiency: 99.9% Type

Description:

MB85R4M2TFN-G-JAE2 FRAM Device – Non-Volatile High-Endurance Memory

The MB85R4M2TFN-G-JAE2 is a high-performance ferroelectric RAM (FRAM) device from Fujitsu engineered for industrial applications demanding non-volatile data persistence, unlimited write cycle endurance, and reliable operation across extreme temperature environments. This advanced memory technology combines the speed of SRAM with the non-volatility of flash memory, enabling mission-critical data logging, configuration storage, and real-time system monitoring without endurance limitations.

Key B2B Features:

  • Non-Volatile Storage: Retains data indefinitely without power supply, preventing data loss during unexpected shutdowns
  • Unlimited Write Cycles: Supports continuous read-write operations without wear degradation or replacement cycles
  • SRAM-Speed Access: Nanosecond access times enable responsive real-time applications and instant data retrieval
  • Extended Temperature Range: Stable performance across -40°C to +85°C industrial specifications
  • Low Power Consumption: Minimizes thermal dissipation and extends battery life in portable systems
  • Radiation Tolerant: Suitable for aerospace, defense, and high-altitude applications

Primary Applications:

  • Industrial process control and automation systems
  • Energy metering and power monitoring equipment
  • Renewable energy data logging and analytics
  • Automotive embedded systems and telemetry
  • Medical device configuration storage
  • IoT sensor nodes and edge computing
  • Field instrumentation and portable devices
  • Distributed control system architectures

Technical Advantages:

The MB85R4M2TFN-G-JAE2 eliminates write-cycle limitations inherent in flash memory, enabling continuous logging without page-erasing delays or memory degradation. Its atomic write capability ensures data integrity during power interruptions without backup capacitors.

Order & Support: Source MB85R4M2TFN-G-JAE2 FRAM devices from authorized Fujitsu distributors. Access datasheets, application guides, and design resources for seamless system integration.